The Institute of Information and Communication Technology (IICT) is one of the institute of Bangladesh University of Engineering and Technology. The Syndicate of BUET had taken the decision on 28th June, 2001 to start the institute and the formal inaugural ceremony of the institute was held on 2nd September, 2001. The syndicate had taken the decision following a decision of the government in order to produce more professionals in the IT sector. The erstwhile Computer Center of BUET has been taken as the backbone of the institute and the previous center has been modified accordingly to form the institute. The main objectives of the institute include offering Post Graduate programs in addition to the services as were provided by the erstwhile Computer Center.
The institute is located on the sixth and seventh floor of the ECE Building, West Palashi Campus, BUET. Located within the serene environment of BUET, IICT is an ideal place for technology based education. It is easily accessible by major roads from all parts of the city. Its proximity to residential areas, markets, universities, industries and research centers makes it an excellent spot for its members to avail all their necessities.
M. J. Miah, A. Boni, D. Martin, A. Ginolas, M. Elattar, P. Della Casa, S. Grützner, S. Strohmaier, A. Knigge, G. Tränkle, and P. Crump Thermal lens manipulation using edge-heaters in laser bars for improved efficiency and divergence. IEEE Photonics Technology Letters, vol. 37, no. 9, pp. 545–548, May 2025.
Hossain, M. A. and Islam, M. S. A novel feature selection-driven ensemble learning approach for accurate botnet attack detection. Alexandria Engineering Journal, Volume 118, Pages 261-277, Apr 2025.
P. Crump, A. Boni, M. Elattar, S. Khamari, I. Marko, S. Sweeney, S. Arslan, B. King, M. J. Miah, D. Martin, A. Knigge, P. Della Casa, and G. Tränkle Power and efficiency scaling of GaAs-based high-power laser diodes. IEEE Journal of Selected Topics in Quantum Electronics. . IEEE Journal of Selected Topics in Quantum Electronics, vol. 31, no. 2, p. 1502512, Apr 2025.
P. Crump, A. Boni, M. Elattar, S. K. Khamari, I. P. Marko, S. J. Sweeney, S. Arslan, B. King, M. J. Miah, D. Martin, A. Knigge, P. Della Casa, and G. Tränkle Experimental studies of GaAs-based broad area diode lasers using highly asymmetric epitaxial structures with high modal gain: finding a path to exceeding 80% conversion efficiency at 25 °C. Proceedings of SPIE, vol. 13385, p. 1338547, San Francisco, California, USA, Jan 2025.
M. M. Karow, P. Crump, and M. J. Miah Laserbarren mit verringerter lateraler Fernfelddivergenz (Laser bars with reduced lateral beam divergence). European Patent Application no. DE 10 2021 114 411 B4, Dec 2024.
C.-K. Wu, X.-E. Xue, S.-C. Tian, M. J. Miah, A. Strittmatter, and D. Bimberg Brightness improvement of edge-emitting lasers by combining vertical broad-area HiBBEE and laterally inhomogeneous waveguides. APL Photonics, vol. 9, no. 12, p. 126113, Dec 2024.
